Nano Express

Nanoscale Research Letters

, Volume 4, Issue 11, pp 1315-1318

Open Access This content is freely available online to anyone, anywhere at any time.

Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well

  • Jun WangAffiliated withKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences Email author 
  • , Shu-Shen LiAffiliated withState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductrors, Chinese Academy of Sciences
  • , Yan-Wu LüAffiliated withDepartment of Physics, Beijing Jiaotong University
  • , Xiang-Lin LiuAffiliated withKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences
  • , Shao-Yan YangAffiliated withKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences
  • , Qin-Sheng ZhuAffiliated withKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences
  • , Zhan-Guo WangAffiliated withKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences

Abstract

In the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling, the binding energy E b and spin-orbit split energy Г of the ground state of a hydrogenic donor impurity in AlGaN/GaN triangle-shaped potential heterointerface are calculated. We find that with the electric field of the heterojunction increasing, (1) the effective width of quantum well \( \overline{\text{W}} \) decreases and (2) the binding energy increases monotonously, and in the mean time, (3) the spin-orbit split energy Г decreases drastically. (4) The maximum of Г is 1.22 meV when the electric field of heterointerface is 1 MV/cm.

Keywords

Binding energy Spin-orbit splitting Hydrogenic donor impurity AlGaN/GaN