, Volume 4, Issue 10, p 1256,
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Ellipsoidal InAs Quantum Dots

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Uses of semiconductor quantum dots (QDs) have been explored for attractive applications such as quantum information processing, lasers and solar cells to name a few. However, their ability to become integrated with existing technologies depends on shape, composition and size, all of which play a role in modifying both the optical and electrical properties of the QDs. However, an in-depth understanding of the structure-property relationship of QDs is still lacking. In an effort to expand the understanding of this relationship, scientists from the Radboud University Nijmegen (The Netherlands), Eindhoven University of Technology (The Netherlands) and the Ruhr-Universität in Bochum (Germany) have employed the use of cross-sectional scanning tunneling microscopy (X-STM), a technique perfected by Paul Koenraad’s group at the COBRA Inter-University Research Institute in Eindhoven, to investigate and determine the structural composition of InAs QDs. The results of the work entitled, “Ellipsoid