Nano Express

Nanoscale Research Letters

, Volume 4, Issue 10, pp 1126-1129

Open Access This content is freely available online to anyone, anywhere at any time.

Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al2O3 Nanowires Based on Porous Anodic Alumina Film

  • Zhi-Hao YuanAffiliated withNanomaterials & Nanotechnology Research Center, Tianjin University of TechnologyTianjin Key Lab for Photoelectric Materials & Devices Email author 
  • , Shao-Qing SunAffiliated withNanomaterials & Nanotechnology Research Center, Tianjin University of Technology
  • , Yue-Qin DuanAffiliated withNanomaterials & Nanotechnology Research Center, Tianjin University of Technology
  • , Da-Jian WangAffiliated withInstitute of Materials Physics, Tianjin University of TechnologyKey Laboratory of Display Materials & Photoelectronic Devices, Tianjin University of Technology, Ministry of Education Email author 

Abstract

Porous alumina film on aluminum with gel-like pore wall was prepared by a two-step anodization of aluminum, and the corresponding gel-like porous film was etched in diluted NaOH solution to produce alumina nanowires in the form of densely packed alignment. The resultant alumina nanowires were reacted with NH3 and evaporated aluminum at an elevated temperature to be converted into densely packed aluminum nitride (AlN) nanowires. The AlN nanowires have a diameter of 15–20 nm larger than that of the alumina nanowires due to the supplement of the additional evaporated aluminum. The results suggest that it might be possible to prepare other aluminum compound nanowires through similar process.

Keywords

Aluminum nitride Alumina Nanowire Chemical converting Porous film