Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2 S3 Nanowires
In this study, β-In2S3 nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, β-In2S3 nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the β-In2S3 nanowires is about 60 nm with the length of about 6–8 μm. Moreover, the aspect ratio of β-In2S3 nanowires is up to 117. An EDS analysis revealed the β-In2S3 nanowires with an atomic ratio of nearly S/In = 1.5. X-ray diffraction and corresponding selected area electron diffraction patterns demonstrated that the β-In2S3 nanowire is tetragonal polycrystalline. The direct band gap energy (Eg) is 2.40 eV from the optical measurement, and it is reasonable with literature.
- Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2S3 Nanowires
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Nanoscale Research Letters
Volume 4, Issue 9 , pp 1059-1063
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- 1. Department of Electronic Engineering, Feng Chia University, Taichung, 40724, Taiwan
- 2. The Graduate Institute of Electrical and Communications Engineering, Feng Chia University, 100, Wen-Hwa Rd, Seatwen, Taichung, 40724, Taiwan