Nano Express

Nanoscale Research Letters

, Volume 4, Issue 9, pp 1059-1063

Open Access This content is freely available online to anyone, anywhere at any time.

Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2S3 Nanowires

  • Jen-Bin ShiAffiliated withDepartment of Electronic Engineering, Feng Chia University
  • , Chih-Jung ChenAffiliated withThe Graduate Institute of Electrical and Communications Engineering, Feng Chia University
  • , Ya-Ting LinAffiliated withThe Graduate Institute of Electrical and Communications Engineering, Feng Chia University Email author 
  • , Wen-Chia HsuAffiliated withDepartment of Electronic Engineering, Feng Chia University
  • , Yu-Cheng ChenAffiliated withThe Graduate Institute of Electrical and Communications Engineering, Feng Chia University
  • , Po-Feng WuAffiliated withThe Graduate Institute of Electrical and Communications Engineering, Feng Chia University

Abstract

In this study, β-In2S3 nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, β-In2S3 nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the β-In2S3 nanowires is about 60 nm with the length of about 6–8 μm. Moreover, the aspect ratio of β-In2S3 nanowires is up to 117. An EDS analysis revealed the β-In2S3 nanowires with an atomic ratio of nearly S/In = 1.5. X-ray diffraction and corresponding selected area electron diffraction patterns demonstrated that the β-In2S3 nanowire is tetragonal polycrystalline. The direct band gap energy (Eg) is 2.40 eV from the optical measurement, and it is reasonable with literature.

Keywords

Nanomaterials In2S3 Nanowire AAO