One-Dimensional Nanostructures and Devices of II–V Group Semiconductors
- Guozhen ShenAffiliated withWuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Technology, Huazhong University of Science and Technology Email author
- , Di ChenAffiliated withWuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Technology, Huazhong University of Science and Technology
The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2 nanowires, one-dimensional (1-D) nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, and p–n heterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.
KeywordsNanowires Nanotubes Nanobelts Semiconductors Nanoelectronics
- One-Dimensional Nanostructures and Devices of II–V Group Semiconductors
- Open Access
- Available under Open Access This content is freely available online to anyone, anywhere at any time.
Nanoscale Research Letters
Volume 4, Issue 8 , pp 779-788
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