Surface Localization of Buried III–V Semiconductor Nanostructures
In this work, we study the top surface localization of InAs quantum dots once capped by a GaAs layer grown by molecular beam epitaxy. At the used growth conditions, the underneath nanostructures are revealed at the top surface as mounding features that match their density with independence of the cap layer thickness explored (from 25 to 100 nm). The correspondence between these mounds and the buried nanostructures is confirmed by posterior selective strain-driven formation of new nanostructures on top of them, when the distance between the buried and the superficial nanostructures is short enough (d = 25 nm).
- Surface Localization of Buried III–V Semiconductor Nanostructures
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Nanoscale Research Letters
Volume 4, Issue 8 , pp 873-877
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- Droplet epitaxy
- III–V Semiconductor nanostructures
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