Nano Express

Nanoscale Research Letters

, Volume 4, Issue 8, pp 846-849

Open Access This content is freely available online to anyone, anywhere at any time.

Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores

  • M. PaladuguAffiliated withSchool of Engineering, The University of Queensland
  • , J. ZouAffiliated withSchool of Engineering, The University of QueenslandCentre for Microscopy and Microanalysis, The University of Queensland Email author 
  • , Y. N. GuoAffiliated withSchool of Engineering, The University of Queensland
  • , X. ZhangAffiliated withSchool of Engineering, The University of Queensland
  • , H. J. JoyceAffiliated withDepartment of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University
  • , Q. GaoAffiliated withDepartment of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University
  • , H. H. TanAffiliated withDepartment of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University
  • , C. JagadishAffiliated withDepartment of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University Email author 
  • , Y. KimAffiliated withDepartment of Physics, Dong-A University

Abstract

GaAs was radially deposited on InAs nanowires by metal–organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.

Keywords

Nanowire heterostructures GaAs/InAs Crystal structure