Nano Express

Nanoscale Research Letters

, Volume 4, Issue 8, pp 802-808

Open Access This content is freely available online to anyone, anywhere at any time.

Synthesis of Novel Double-Layer Nanostructures of SiC–WO x by a Two Step Thermal Evaporation Process

  • Hyeyoung KimAffiliated withDepartment of Chemical Engineering, Pohang University of Science and Technology (POSTECH)
  • , Karuppanan SenthilAffiliated withCenter for Information Materials, Pohang University of Science and Technology (POSTECH)
  • , Kijung YongAffiliated withDepartment of Chemical Engineering, Pohang University of Science and Technology (POSTECH) Email author 

Abstract

A novel double-layer nanostructure of silicon carbide and tungsten oxide is synthesized by a two-step thermal evaporation process using NiO as the catalyst. First, SiC nanowires are grown on Si substrate and then high density W18O49 nanorods are grown on these SiC nanowires to form a double-layer nanostructure. XRD and TEM analysis revealed that the synthesized nanostructures are well crystalline. The growth of W18O49 nanorods on SiC nanowires is explained on the basis of vapor–solid (VS) mechanism. The reasonably better turn-on field (5.4 V/μm) measured from the field emission measurements suggest that the synthesized nanostructures could be used as potential field emitters.

Keywords

Silicon carbide Tungsten oxide Nanowires Nanorods Vapor–solid mechanism Field emission