Nano Express

Nanoscale Research Letters

, Volume 4, Issue 7, pp 689-693

Open Access This content is freely available online to anyone, anywhere at any time.

Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates

  • Lu WangAffiliated withDepartment of Materials Physics and Chemistry, Harbin Institute of Technology
  • , Meicheng LiAffiliated withDepartment of Materials Physics and Chemistry, Harbin Institute of Technology Email author 
  • , Min XiongAffiliated withDepartment of Materials Physics and Chemistry, Harbin Institute of Technology
  • , Liancheng ZhaoAffiliated withDepartment of Materials Physics and Chemistry, Harbin Institute of Technology

Abstract

The morphology and transition thickness (t c) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientation. And t c decreased when the thin InGaAs was used as a buffer layer instead of the GaAs layer on (311) B substrates. For InAs/(In)GaAs QDs grown on high miller index surfaces, both the morphology and t c can be influenced by the interfacial bonds configuration. This indicates that buffer layer design with appropriate interfacial bonds provides an approach to adjust the morphologies of QDs grown on high miller surfaces.

Keywords

InAs Transition thickness High miller index Strain Interfacial bonds