Nano Express

Nanoscale Research Letters

, Volume 4, Issue 6, pp 584-587

Open Access This content is freely available online to anyone, anywhere at any time.

Synthesis and Characterization of Glomerate GaN Nanowires

  • Lixia QinAffiliated withDepartment of Physics, School of Sciences, China University of Mining and Technology
  • , Chengshan XueAffiliated withInstitute of Semiconductors, College of Physics and Electronics, Shandong Normal University
  • , Yifeng DuanAffiliated withDepartment of Physics, School of Sciences, China University of Mining and Technology Email author 
  • , Liwei ShiAffiliated withDepartment of Physics, School of Sciences, China University of Mining and Technology

Abstract

Glomerate GaN nanowires were synthesized on Si(111) substrates by annealing sputtered Ga2O3/Co films under flowing ammonia at temperature of 950 °C. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscopy and Fourier transformed infrared spectra were used to characterize the morphology, crystallinity and microstructure of the as-synthesized samples. Our results show that the samples are of hexagonal wurtzite structure. For the majority of GaN nanowires, the length is up to tens of microns and the diameter is in the range of 50–200 nm. The growth process of the GaN nanowires is dominated by Co–Ga–N alloy mechanism.

Keywords

Nanowires Magnetron sputtering Alloy mechanism