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Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

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Abstract

Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius’ parameters (D=D 0exp(−ΔE a/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D 0, and the activation energy, ΔE a, of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. Reasons of the lack of correspondence of the data to compensative dependence are discussed.

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Acknowledgments

This work is partly supported by the Science@Technology Center of Ukraine under the project P406 with U. S. Department of Energy, and by DOE/NNSA MNN R&D. The authors wish to thank Dr. D. Shaw, for his time spent in discussions and his useful advices.

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  1. Chernivtsy National University, 2, Kotsiubynskoho Str., Chernivtsi, 58012, Ukraine

    L. Shcherbak, O. Kopach & P. Fochuk

  2. Brookhaven National Laboratory, Upton, NY, 11973, USA

    A. E. Bolotnikov & R. B. James

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  1. L. Shcherbak
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Shcherbak, L., Kopach, O., Fochuk, P. et al. Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals. J. Phase Equilib. Diffus. 36, 99–109 (2015). https://doi.org/10.1007/s11669-015-0364-8

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