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Effect of Phosphorous Inoculation on Creep Behavior of a Hypereutectic Al-Si Alloy

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Abstract

Creep behavior of Al-Si hypereutectic alloys inoculated with phosphorus was investigated using the impression creep testing. The results showed that at stress regimes of up to 400-450 MPa and temperatures up to 300 °C, no significant creep deformation occurred in both uninoculated and inoculated specimens; however, at temperatures above 300 °C, the inoculated alloys presented better creep properties. Creep data were used to calculate the stress exponent of steady-state creep rate, n, and creep activation energy, Q, for different additive conditions where n was found varied between 5 and 8. Owing to the fact that most alloys have lower values for n (4, 5), threshold stress was estimated for studied conditions. The creep governing mechanisms for different conditions are discussed here, with a particular attention to the effect of phosphorous addition on the microstructural features, including number of primary silicon particles, mean primary silicon spacing, and morphology and distribution of eutectic silicon.

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Author notes

  1. Masoumeh Faraji

    Present address: Materials and Engineering Research Institute (MERI), Sheffield Hallam University, City Campus, Howard Street, Sheffield, S1 1WB, UK

Authors and Affiliations

  1. Materials Science and Engineering Department, The University of Sheffield, Sir Robert Hadfield Building, Mappin Street, Sheffield, S1 3JD, UK

    Masoumeh Faraji

  2. Iran University of Industries and Mines, North Amir Abad Ave., 15th Street, 14395518, Tehran, Iran

    Hamid Khalilpour

Authors
  1. Masoumeh Faraji
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  2. Hamid Khalilpour
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Correspondence to Masoumeh Faraji.

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Faraji, M., Khalilpour, H. Effect of Phosphorous Inoculation on Creep Behavior of a Hypereutectic Al-Si Alloy. J. of Materi Eng and Perform 23, 3467–3473 (2014). https://doi.org/10.1007/s11665-014-1152-z

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  • DOI: https://doi.org/10.1007/s11665-014-1152-z

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