Materials issues for InGaN-based lasers
- Cite this article as:
- Nakamura, S. Journal of Elec Materi (1998) 27: 160. doi:10.1007/s11664-998-0379-6
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InGaN multi-quantum-well-structure (MQW) laser diodes (LDs) with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice (MD-SLS) cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate were demonstrated to have a lifetime of more than 1800 h under the condition of room-temperature continuous-wave operation. On the other hand, the LDs grown directly on the sapphire substrate had a lifetime of shorter than 900 h. With the operating current increasing to above the threshold, a self-pulsation was observed to have a high frequency of 3 GHz and a photon lifetime of 0.7 ps. The use of the MD-SLS was effective for reducing the operating voltage of the LDs. The ELOG substrate was used to reduce the number of threading dislocations in the InGaN MQW structure.