Journal of Electronic Materials

, Volume 27, Issue 4, pp 160–165

Materials issues for InGaN-based lasers

  • Shuji Nakamura
Special Issue Paper

DOI: 10.1007/s11664-998-0379-6

Cite this article as:
Nakamura, S. Journal of Elec Materi (1998) 27: 160. doi:10.1007/s11664-998-0379-6

Abstract

InGaN multi-quantum-well-structure (MQW) laser diodes (LDs) with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice (MD-SLS) cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate were demonstrated to have a lifetime of more than 1800 h under the condition of room-temperature continuous-wave operation. On the other hand, the LDs grown directly on the sapphire substrate had a lifetime of shorter than 900 h. With the operating current increasing to above the threshold, a self-pulsation was observed to have a high frequency of 3 GHz and a photon lifetime of 0.7 ps. The use of the MD-SLS was effective for reducing the operating voltage of the LDs. The ELOG substrate was used to reduce the number of threading dislocations in the InGaN MQW structure.

Key words

GaN InGaN laser diodes lifetime 

Copyright information

© TMS-The Minerals, Metals and Materials Society 1998

Authors and Affiliations

  • Shuji Nakamura
    • 1
  1. 1.Department of Research and DevelopmentNichia Chemical Industries, Ltd.TokushimaJapan