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Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

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Abstract

The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and their temperature dependence will allow one to simulate and predict the device performances. We present a temperature-dependent internal-photoemission spectroscopy (TDIPS) for studying the band offsets. Applications of the TDIPS into III–V and II–VI materials are discussed.

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Acknowledgements

This work was supported in part by the U.S. Army Research Office under Grant No. W911NF-12-2-0035 monitored by Dr. William W. Clark.

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Authors and Affiliations

  1. Department of Physics and Astronomy, Georgia State University, Atlanta, GA, 30303, USA

    A. G. U. Perera & Y. F. Lao

  2. U.S. Army Research Laboratory, Adelphi, MD, 20783, USA

    P. S. Wijewarnasuriya

  3. Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM, 87106, USA

    S. S. Krishna

Authors
  1. A. G. U. Perera
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  2. Y. F. Lao
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  3. P. S. Wijewarnasuriya
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  4. S. S. Krishna
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Correspondence to A. G. U. Perera.

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Perera, A.G.U., Lao, Y.F., Wijewarnasuriya, P.S. et al. Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy. J. Electron. Mater. 45, 4626–4630 (2016). https://doi.org/10.1007/s11664-016-4729-5

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  • DOI: https://doi.org/10.1007/s11664-016-4729-5

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