Abstract
Continued effort has been placed on maximizing activation while controlling the diffusion of silicon doping in InGaAs for present and future complementary metal-oxide semiconductor devices. In order to explore the diffusion and activation behavior, Si marker layers were grown in InGaAs on InP by molecular beam epitaxy. The nature of Si diffusion was explored using a series of isoelectronic implants to introduce excess point defects near the layer. It was observed that excess interstitials reduce the Si diffusion consistent with a vacancy-driven diffusion mechanism. A diffusion and activation model implemented in the Florida object oriented process simulator has been developed to predict silicon diffusion behavior over a variety of temperatures and times. Using current and previous experimental data and complimentary density functional theory results, the diffusion model employs the SiIII–VIII pair as the primary mechanism for silicon diffusion in InGaAs.
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Acknowledgements
The authors would like to thank Intel and the Semiconductor Research Corporation for continued support of this work under SRC task# 2300. C. C. Bomberger is supported by the National Science Foundation (NSF) (DMR-1505574) and by the Delaware Space Grant College and Fellowship Program (NASA Grant-NNX15AI19H). J. M. O. Zide is also supported by the NSF. Work at Vanderbilt was supported by NSF grant ECCS-1508898. The authors would also like to thank the University of Florida Nanoscale Research Facility (NRF) for aid in protective caps prior to processing, and Evans Analytical Group for SIMS after processing. Finally the authors would like to thank Harold Kennel, Aaron Lilak and Martin Giles for several helpful modeling discussions.
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Aldridge, H., Lind, A.G., Bomberger, C.C. et al. Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As. J. Electron. Mater. 45, 4282–4287 (2016). https://doi.org/10.1007/s11664-016-4616-0
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DOI: https://doi.org/10.1007/s11664-016-4616-0