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Electrodeposition and Thermoelectric Properties of Cu-Se Binary Compound Films

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Abstract

Cu-Se binary compound films have been prepared by electrodeposition from solutions containing CuSO4, H2SeO3, and H2SO4 and their composition, structure, and thermoelectric performance analyzed. Moving the depositing potential negatively increased the Cu content in the film, remarkably so for relatively low Cu2+ concentration in the solution. X-ray diffraction analysis showed that the phase composition of the films varied with their Cu content. Cu-Se binary compound films electrodeposited from solutions with different concentration ratios of CuSO4 to H2SeO3 showed two different phases: α-Cu2−x Se (monoclinic) with Se content in the range of 33.3 at.% to 33.8 at.%, and β-Cu2Se (cubic) with Se content in the range of 35.3 at.% to 36.0 at.%. The highest power factor for electrodeposited Cu2−x Se film was 0.13 mW/(K2 m) with Seebeck coefficient of 56.0 μV/K.

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Authors and Affiliations

  1. Department of Applied Chemistry, School of Chemical Engineering and Technology, Tianjin University, 300072, Tianjin, People’s Republic of China

    Mengqian Yang, Zhengwu Shen, Xiaoqing Liu & Wei Wang

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  1. Mengqian Yang
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  2. Zhengwu Shen
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  3. Xiaoqing Liu
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  4. Wei Wang
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Correspondence to Wei Wang.

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Yang, M., Shen, Z., Liu, X. et al. Electrodeposition and Thermoelectric Properties of Cu-Se Binary Compound Films. J. Electron. Mater. 45, 1974–1981 (2016). https://doi.org/10.1007/s11664-016-4344-5

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  • DOI: https://doi.org/10.1007/s11664-016-4344-5

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