Abstract
Thick, high-quality InGaN layers can be used as templates for quantum well strain reduction in light-emitting diodes and as optical absorption layers in solar cell structures. Current InGaN growth technology, however, is primarily limited by V-pit formation and non-uniform indium composition. We report the growth and characterization of thick, strain-relaxed In y Ga1− y N layers, with 0.08 ≤ y ≤ 0.11, by metal organic chemical vapor deposition using the semibulk approach, which consists in periodic insertion of 2-nm GaN interlayers into the bulk In y Ga1− y N structure; these are then spike-annealed at 1000°C. Photoluminescence, x-ray diffraction, and scanning electron and atomic force microscopy revealed that the semibulk In y Ga1− y N had optical and electrical properties superior to those of conventional bulk In y Ga1− y N grown at the same temperature. Homogeneous indium content and substantial reduction of V-pit density were observed for the semibulk In y Ga1− y N films, even when grown above the critical layer thickness. Double-crystal x-ray diffraction rocking curves also revealed a one order of magnitude reduction of screw dislocation density in the semibulk In y Ga1− y N film compared with the bulk In y Ga1− y N film.
Similar content being viewed by others
References
F. Bechstedt, J. Furthmüller, M. Ferhat, L.K. Teles, L.M.R. Scolfaro, J.R. Leite, VYu Davydov, O. Ambacher, and R. Goldhahn, Phys. Status Solidi A. 195, 628 (2003).
D.M. Van Den Broeck, D. Bharrat, A.M. Hosalli, N.A. El-Masry, and S.M. Bedair, Appl. Phys. Lett. 105, 031107 (2014).
Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S.Y. Wang, Appl. Phys. Lett. 72, 710 (1998).
S.M. Bedair, F.G. McIntosh, J.C. Roberts, E.L. Piner, K.S. Boutros, and N.A. El-Masry, J. Cryst. Growth 178, 32 (1997).
A.M. Sánchez, M. Gass, A.J. Papworth, P.J. Goodhew, P. Singh, P. Ruterana, H.K. Cho, R.J. Choi, and H.J. Lee, Thin Solid Films 479, 316 (2005).
P.Q. Miraglia, E.A. Preble, A.M. Roskowski, S. Einfeldt, S.H. Lim, Z. Liliental-Weber, and R.F. Davis, Thin Solid Films 437, 140 (2003).
S. Pereira, M.R. Correia, E. Pereira, K.P. O’Donnell, E. Alves, A.D. Sequeria, N. France, A.M. Watson, and C.J. Deatcher, Appl. Phys. Lett. 80, 3913 (2002).
K. Pantzas, G. Patriarche, G. Orsal, S. Gautier, T. Moudakir, M. Abid, V. Gorge, Z. Djebbour, P.L. Voss, and A. Ougazzaden, Phys. Status Solidi A. 209, 25 (2012).
K. Pantzas, Y. El Gmili, J. Dickerson, S. Gautier, L. Largeau, O. Mauguin, G. Patriarche, S. Suresh, T. Moudakir, C. Bishop, A. Ahaitouf, T. Rivera, C. Tanguy, P.L. Voss, and A. Ougazzaden, J. Cryst. Growth 370, 57 (2013).
S.M. Bediar, T. Katsuyama, M. Timmons, and M.A. Tischler, IEEE Electron Device Lett. 5, 45 (1984).
J. Matthews and A. Blakeslee, J. Cryst. Growth 27, 118 (1974).
C.A. Parker, J.C. Roberts, S.M. Bediar, M.J. Reed, S.X. Liu, and N.A. El-Masry, Appl. Phys. Lett. 75, 2776 (1999).
E.L. Piner, M.K. Behbehani, N.A. El-Masry, F.G. McIntosh, J.C. Roberts, K.S. Boutros, and S.M. Bedair, Appl. Phys. Lett. 70, 461 (1997).
C.A. Parker, J.C. Roberts, S.M. Bedair, M.J. Reed, S.X. Liu, N.A. El-Masry, and L.H. Robins, Appl. Phys. Lett. 75, 2566 (1999).
S. Lee, A. West, A. Allerman, K. Waldrip, D. Follstaedt, P. Provencio, D. Koleske, and C. Abernathy, Appl. Phys. Lett. 86, 241904 (2005).
A.E. Romanov, W. Pompe, G.E. Beltz, and J.S. Speck, Appl. Phys. Lett. 69, 3342 (1996).
Acknowledgement
This work was supported by the National Science Foundation under project DMR 1105842.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Van Den Broeck, D., Bharrat, D., Liu, Z. et al. Growth and Characterization of High-Quality, Relaxed In y Ga1−y N Templates for Optoelectronic Applications. J. Electron. Mater. 44, 4161–4166 (2015). https://doi.org/10.1007/s11664-015-3989-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-015-3989-9