High-quality single-domain (ZnO[11–20]//Al2O3[10–10]) ZnO heteroepitaxial growth on c-face sapphire [Al2O3(0001)] substrate at low temperature was investigated by vanadium (V) doping at growth temperatures between 150°C and 450°C using radiofrequency (RF) magnetron sputtering. In low-temperature growth at 150°C and 200°C, 30° twisted domains (ZnO[10–10]//Al2O3[10–10]) were eliminated and good in-plane crystal orientation was obtained for V doping of about 2 at.% to 3 at.%. Single domains were grown from the early stage. From the changes of surface morphology and growth rate, it was considered that migration during the growth was enhanced due to the increase of the diffusion energy of adatoms, while random nucleation was suppressed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
K. Ellmer, Nat. Photonics 6, 809 (2012).
G.S. Chae, Jpn. J. Appl. Phys. 40, 1282 (2001).
I. Repins, M.A. Contreras, B. Egaas, C. DeHart, J. Scharf, C.L. Perkins, B. To, and R. Noufi, Prog. Photovolt. Res. Appl. 16, 235 (2008).
I. Ohkubo, Y. Matsumoto, A. Ohtomo, T. Ohnishi, A. Tsukazaki, M. Lippmaa, H. Koinuma, and M. Kawasaki, Appl. Surf. Sci. 159, 514 (2000).
K. Nakahara, H. Takasu, P. Fons, K. Iwata, A. Yamada, K. Matsubara, R. Hunger, and S. Niki, J. Cryst. Growth 227, 923 (2001).
B.P. Zhang, K. Wakatsuki, N.T. Binh, N. Usami, and Y. Segawa, Thin Solid Films 449, 12 (2004).
R. Triboulet and J. Perriere, Prog. Cryst. Growth Charact. Mater. 47, 65 (2003).
R.D. Vispute, V. Talyansky, Z. Trajanovic, S. Choopun, M. Downes, R.P. Sharme, T. Venkatesan, M.C. Woods, R.T. Lareau, K.A. Jones, and A.A. Liiadis, Appl. Phys. Lett. 70, 2735 (1997).
X.L. Du, M. Murakami, H. Iwaki, and A. Yoshikawa, Phys. Stat. Sol. 1, 183 (2002).
R. Janisch, P. Gopal, and N.A. Spaldin, J. Phys. Condens. Matter 17, 657 (2005).
N.A. Spaldin, Phys. Rev. B 69, 125201 (2004).
C. Song, Phys. Rev. B 76, 045215 (2007).
H. Saeki, H. Tabata, and T. Kawai, Solid State Commun. 120, 439 (2001).
K. Lovshinov, H. Nichev, O. Angelov, M.S. Vassileva, V. Mikli, and D.D. Malinovska, J. Phys. Conf. Ser. 253, 012030 (2010).
S. Okuda, T. Matsuo, H. Chiba, T. Mori, and K. Washio, Thin Solid Films 557, 197 (2014).
T. Hiramatsu, M. Furuta, H. Furuta, T. Matsuda, and T. Hirao, Jpn. J. Appl. Phys. 46, 3319 (2007).
R.D. Shannon, Acta Crystallogr. A32, 751 (1976).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Chiba, H., Mori, T., Kawashima, T. et al. Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire. J. Electron. Mater. 44, 1351–1356 (2015). https://doi.org/10.1007/s11664-014-3587-2
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-014-3587-2