Abstract
We demonstrate the growth of ordered arrays of nonpolar \(\{ 10\bar{1}0\} \) core–shell nanowalls and semipolar \( \{ 10\bar{1}1\}\) core–shell pyramidal nanostripes on c-plane (0001) sapphire substrates using selective-area epitaxy and metal organic chemical vapor deposition. The nanostructure arrays are controllably patterned into LED mesa regions, demonstrating a technique to impart secondary lithography features into the arrays. We study the dependence of the nanostructure cores on the epitaxial growth conditions and show that the geometry and morphology are strongly influenced by growth temperature, V/III ratio, and pulse interruption time. We also demonstrate the growth of InGaN quantum well shells on the nanostructures and characterize the structures by using micro-photoluminescence and cross-section scanning tunneling electron microscopy.
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Acknowledgements
This work is supported by the NSF under cooperative agreement EEC-0812056. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-AC04-94AL85000. The authors would like to acknowledge Jacqueline Shortridge for helping with SEM sample preparation.
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Rishinaramangalam, A.K., Ul Masabih, S.M., Fairchild, M.N. et al. Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices. J. Electron. Mater. 44, 1255–1262 (2015). https://doi.org/10.1007/s11664-014-3456-z
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DOI: https://doi.org/10.1007/s11664-014-3456-z