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Bi2SiO5 Doping Concentration Effects on the Electrical Properties of SrBi2Ta2O9 Films

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Abstract

In this paper, we investigated the microstructure and electrical properties of Bi2SiO5 (BSO) doped SrBi2Ta2O9 (SBT) films deposited by chemical solution deposition. X-ray diffraction observation indicated that the crystalline structures of all the BSO-doped SBT films are nearly the same as those of a pure SBT film. Through BSO doping, the 2Pr and 2Ec values of SBT films were changed from 15.3 μC/cm2 and 138 kV/cm of pure SBT to 1.45 μC/cm2 and 74 kV/cm of 10 wt.% BSO-doped SBT. The dielectric constant at 1 MHz for SBT varied from 199 of pure SBT to 96 of 10 wt.% BSO-doped SBT. The doped SBT films exhibited higher leakage current than that of non-doped SBT films. Nevertheless, all the doped SBT films still had small dielectric loss and low leakage current. Our present work will provide useful insights into the BSO doping effects to the SBT films, and it will be helpful for the material design in the future nonvolatile ferroelectric memories.

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Acknowledgement

This work was supported by the National Natural Science Foundation of China (51332006, 61271127).

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Authors and Affiliations

  1. South China Academy of Advanced Optoelectronics, Institute of Advanced Materials, South China Normal University, Guangzhou, 510006, China

    Ming Li, Yang Zhang, Yayun Shao, Min Zeng, Zhang Zhang, Xingsen Gao & Xubing Lu

  2. Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China

    J.-M. Liu

  3. Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama, Kanagawa, 226-8502, Japan

    Xubing Lu & Hiroshi Ishiwara

Authors
  1. Ming Li
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  2. Yang Zhang
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  3. Yayun Shao
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  4. Min Zeng
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  5. Zhang Zhang
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  6. Xingsen Gao
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  7. Xubing Lu
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  8. J.-M. Liu
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  9. Hiroshi Ishiwara
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Correspondence to Xubing Lu.

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Li, M., Zhang, Y., Shao, Y. et al. Bi2SiO5 Doping Concentration Effects on the Electrical Properties of SrBi2Ta2O9 Films. J. Electron. Mater. 43, 3625–3629 (2014). https://doi.org/10.1007/s11664-014-3258-3

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  • DOI: https://doi.org/10.1007/s11664-014-3258-3

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