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Development of 3.7 % Efficient Cu2ZnSnSe4 Solar Cells by Selenizing Cu-Zn-Sn Films Deposited by DC Sputtering on TiN-Protected Mo/Glass Substrates

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Abstract

Cu2ZnSnSe4 (CZTSe) films for solar cell devices were fabricated by sputtering of a Cu-Zn-Sn target followed by post-selenization at 500–600 °C for 1 h in the presence of single or double compensation discs to supply Se vapor. The optimized selenization conditions avoided the Se deficiency and enhanced the grain growth of CZTSe films. The 600 °C-selenized CZTSe films adjacent with double discs obtained the large grains of 2–5 μm and had a [Cu]/([Zn]+[Sn]) ratio of 0.94 and a [Zn]/[Sn] ratio of 1.34. In order to fabricate the device on Mo-coated glass substrates, a TiN reaction barrier layer was coated before the Cu-Zn-Sn sputtering coating. The TiN-CZTSe device had 3.7 % efficiency (η), as compared to 0.58 % for the TiN-free one. The efficient device had the CZTSe layer with hole concentration (n p) of 3.4 × 1017 cm−3, Hall mobility (μ) of 54 cm2 V−1 s−1, and electrical conductivity (σ) of 2.9 Ω−1 cm−1.

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Authors and Affiliations

  1. Department of Materials Science and Technology, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan

    Dong-Hau Kuo & Jin-Tung Hsu

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  1. Dong-Hau Kuo
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  2. Jin-Tung Hsu
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Correspondence to Dong-Hau Kuo.

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Kuo, DH., Hsu, JT. Development of 3.7 % Efficient Cu2ZnSnSe4 Solar Cells by Selenizing Cu-Zn-Sn Films Deposited by DC Sputtering on TiN-Protected Mo/Glass Substrates. J. Electron. Mater. 43, 2694–2701 (2014). https://doi.org/10.1007/s11664-014-3137-y

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  • DOI: https://doi.org/10.1007/s11664-014-3137-y

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