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Synthesis and Field Emission Properties of Helical GaN Nanowires

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Abstract

Helical gallium nitride nanowires were synthesized by chemical vapor deposition using a Pt catalyst. The prepared helical GaN nanowires with a single-crystalline hexagonal wurtzite structure have a coil diameter of 150–280 nm and lengths of up to tens of micrometers. The helical GaN nanowires have six equivalent 〈0\( \bar{1} \)11〉 growth directions along the [0001] axis. Field emission measurements show that helical GaN nanowire sheets possess excellent field emission properties, with a low turn-on field of ~4.5 V/μm and a high field enhancement factor of ~2,751. It is believed that this material’s excellent electron emission behavior can be attributed to its unique three-dimensional spiral structure. The growth mechanism of helical GaN nanowires has also been analyzed.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 51042010) and the Natural Science Key Project Foundation of Shaanxi Province, China (No. 2013JZ018).

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Authors and Affiliations

  1. Physics Department, Xi’an University of Technology, Xi’an, 710048, People’s Republic of China

    Enling Li, Sha Song, Deming Ma, Nannan Fu & Yulong Zhang

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  1. Enling Li
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Correspondence to Enling Li.

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Li, E., Song, S., Ma, D. et al. Synthesis and Field Emission Properties of Helical GaN Nanowires. J. Electron. Mater. 43, 1379–1383 (2014). https://doi.org/10.1007/s11664-014-3079-4

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