Article

Journal of Electronic Materials

, Volume 43, Issue 6, pp 2145-2150

Thermoelectric Properties of Al-Doped ZnO Thin Films

  • S. SainiAffiliated withInstitute for Sustainable Sciences and Development, Hiroshima University Email author 
  • , P. MeleAffiliated withInstitute for Sustainable Sciences and Development, Hiroshima University
  • , H. HondaAffiliated withGraduate School for Advanced Sciences of Matter, Hiroshima University
  • , K. MatsumotoAffiliated withDepartment of Material Science, Kyushu Institute of Technology
  • , K. MiyazakiAffiliated withDepartment of Mechanical Engineering, Kyushu Institute of Technology
  • , A. IchinoseAffiliated withElectric Power Engineering Research Laboratory, CRIEPI

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Abstract

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300–600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300–600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient −65 μV/K and power factor 0.13 × 10−3 Wm−1 K−2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10−3 Wm−1 K−2 at 600 K, surpassing the best AZO film previously reported in the literature.

Key words

Thermoelectric ZnO thin films PLD Seebeck power factor