Journal of Electronic Materials

, Volume 43, Issue 6, pp 2145–2150

Thermoelectric Properties of Al-Doped ZnO Thin Films

Authors

    • Institute for Sustainable Sciences and DevelopmentHiroshima University
  • P. Mele
    • Institute for Sustainable Sciences and DevelopmentHiroshima University
  • H. Honda
    • Graduate School for Advanced Sciences of MatterHiroshima University
  • K. Matsumoto
    • Department of Material ScienceKyushu Institute of Technology
  • K. Miyazaki
    • Department of Mechanical EngineeringKyushu Institute of Technology
  • A. Ichinose
    • Electric Power Engineering Research LaboratoryCRIEPI
Article

DOI: 10.1007/s11664-014-2992-x

Cite this article as:
Saini, S., Mele, P., Honda, H. et al. Journal of Elec Materi (2014) 43: 2145. doi:10.1007/s11664-014-2992-x

Abstract

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300–600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300–600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient −65 μV/K and power factor 0.13 × 10−3 Wm−1 K−2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10−3 Wm−1 K−2 at 600 K, surpassing the best AZO film previously reported in the literature.

Key words

Thermoelectric ZnO thin films PLD Seebeck power factor

Copyright information

© TMS 2014