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Characterization of Nonstoichiometric Ti1+x Se2 Prepared by the Method of Modulated Elemental Reactants

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The method of modulated elemental reactants (MER) is used to prepare the layered compound Ti1+x Se2. Using a thin-film precursor prepared by sequentially depositing elemental titanium and selenium by physical vapor deposition, the binary compound is readily formed by short-duration annealing at 350°C. x-Ray diffraction indicates that TiSe2 layers in the film are highly oriented with the c-axis of the layers perpendicular to the substrate. Temperature-dependent electrical resistivity and Hall coefficient measurements for the MER-prepared specimen reveal temperature dependence that is distinct from crystalline stoichiometric TiSe2 in bulk form. The room-temperature Seebeck coefficient was measured to be −134 μV/K, which is opposite in sign and significantly larger in magnitude than stoichiometric crystalline TiSe2, suggesting that carrier transport in the disordered film is markedly different from the bulk crystalline material.

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Correspondence to David C. Johnson.

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Moore, D.B., Sitts, L., Stolt, M.J. et al. Characterization of Nonstoichiometric Ti1+x Se2 Prepared by the Method of Modulated Elemental Reactants. J. Electron. Mater. 42, 1647–1651 (2013). https://doi.org/10.1007/s11664-012-2361-6

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  • DOI: https://doi.org/10.1007/s11664-012-2361-6

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