Abstract
In this study, Fermi level control of point defects during metalorganic chemical vapor deposition (MOCVD) of Mg-doped GaN has been demonstrated by above-bandgap illumination. Resistivity and photoluminescence (PL) measurements are used to investigate the Mg dopant activation of samples with Mg concentration of 2 × 1019 cm−3 grown with and without exposure to ultraviolet (UV) illumination. Samples grown under UV illumination have five orders of magnitude lower resistivity values compared with typical unannealed GaN:Mg samples. The PL spectra of samples grown with UV exposure are similar to the spectra of those grown without UV exposure that were subsequently annealed, indicating a different incorporation of compensating defects during growth. Based on PL and resistivity measurements we show that Fermi level control of point defects during growth of III-nitrides is feasible.
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References
S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
B.Z. Qu, Q.S. Zhu, X.H. Sun, S.K. Wan, Z.G. Wang, H. Nagai, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki, J. Vac. Sci. Technol. A 21, 831 (2003).
S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 31, 1258 (1992).
H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1989).
S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys. 31, L139 (1992).
H. Obloh, K.H. Bachem, U. Kaufmann, M. Kunzer, M. Maier, A. Ramakrishnan, and P. Schlotter, J. Cryst. Growth 195, 270 (1998).
U. Kaufmann, P. Schlotter, H. Obloh, K. Kohler, and M. Maier, Phys. Rev. B 62, 10867 (2000).
D.W. Kisker and R.D. Feldman, J. Cryst. Growth 72, 102 (1985).
S. Fujita and S. Fujita, J. Cryst. Growth 117, 67 (1992).
X. Li, B. Zhang, H. Zhu, X. Dong, X. Xia, Y. Cui, K. Huang, and G. Du, Appl. Surf. Sci. 254, 2081 (2008).
M. Ichimura, T. Wada, S. Fujita, and S. Fujita, Jpn. J. Appl. Phys. 30, 3475 (1991).
Y. Marfaing, Semicond. Sci. Technol. 6, A60 (1991).
J.C. Roberts, K.S. Boutros, S.M. Bedair, and D.C. Look, Appl. Phys. Lett. 64, 2397 (1994).
D. Pritchett, W. Henderson, S.D. Burnham, and W.A. Doolittle, J. Electron. Mater. 35, 562 (2006).
S. Mita, R. Collazo, A. Rice, R.F. Dalmau, and Z. Sitar, J. Appl. Phys. 104, 013521 (2008).
V. Walle and J. Neugebauer, J. Appl. Phys. 95, 3851 (2004).
H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel, Appl. Phys. Lett. 77, 2145 (2000).
G. Callsen, M.R. Wagner, T. Kure, J.S. Reparaz, M. Bugler, J. Brunnmeier, C. Nenstiel, A. Hoffman, M. Hoffmann, J. Tweedie, Z. Bryan, S. Aygun, R. Kirste, R. Collazo, and Z. Sitar, Phys. Rev. B 86, 075207 (2012).
B. Monemar, P.P. Pakov, G. Pozina, C. Hemmingsson, J.P. Bergman, T. Kawashima, H. Amano, I. Akasaki, T. Paskova, S. Figge, D. Hommel, and A. Usui, Phys. Rev. Lett. 102, 235501 (2009).
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Bryan, Z., Hoffmann, M., Tweedie, J. et al. Fermi Level Control of Point Defects During Growth of Mg-Doped GaN. J. Electron. Mater. 42, 815–819 (2013). https://doi.org/10.1007/s11664-012-2342-9
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DOI: https://doi.org/10.1007/s11664-012-2342-9