Abstract
Based on results obtained utilizing combinatorial chemistry techniques to screen the thermoelectric power factor of materials in the system Zn x In y O x+1.5y , several multiphase candidates were down-selected and investigated in terms of their thermoelectric response from room temperature to 1050°C. While the screening experiments suggested that peaks in the power factor occur at relatively high indium oxide content, only the thermoelectric properties of zinc-oxide-rich homologous layered phases in the system (In2O3)(ZnO) k have been well documented, since the phases where k < 3 cannot be easily formed. In the present study, indium-oxide-rich materials in the system In2O3–(In2O3)(ZnO)3 were fabricated and their figures of merit were determined. The results suggest that the indium-oxide-rich phases have improved figures of merit, especially at elevated temperatures, relative to the best performing k phases by combining the high power factor of In2O3 and the low thermal conductivity of (In2O3)(ZnO) k .
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Amani, M., Tougas, I.M., Gregory, O.J. et al. High-Temperature Thermoelectric Properties of Compounds in the System Zn x In y O x+1.5y . J. Electron. Mater. 42, 114–120 (2013). https://doi.org/10.1007/s11664-012-2300-6
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DOI: https://doi.org/10.1007/s11664-012-2300-6