Journal of Electronic Materials

, Volume 41, Issue 12, pp 3393–3401

Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

Authors

    • Department of Electronic and Electrical EngineeringUniversity of Sheffield
  • C.J. Hunter
    • Department of Electronic and Electrical EngineeringUniversity of Sheffield
  • S. Zhang
    • Department of Electronic and Electrical EngineeringUniversity of Sheffield
  • L.J.J. Tan
    • Department of Electronic and Electrical EngineeringUniversity of Sheffield
  • Y.L. Goh
    • Department of Electronic and Electrical EngineeringUniversity of Sheffield
  • J.S. Ng
    • Department of Electronic and Electrical EngineeringUniversity of Sheffield
  • I.P. Marko
    • Advanced Technology Institute, Faculty of Engineering & Physical SciencesUniversity of Surrey
  • S.J. Sweeney
    • Advanced Technology Institute, Faculty of Engineering & Physical SciencesUniversity of Surrey
  • A.R. Adams
    • Advanced Technology Institute, Faculty of Engineering & Physical SciencesUniversity of Surrey
  • J. Allam
    • Advanced Technology Institute, Faculty of Engineering & Physical SciencesUniversity of Surrey
  • J.P.R. David
    • Department of Electronic and Electrical EngineeringUniversity of Sheffield
Article

DOI: 10.1007/s11664-012-2245-9

Cite this article as:
Tan, S., Hunter, C., Zhang, S. et al. Journal of Elec Materi (2012) 41: 3393. doi:10.1007/s11664-012-2245-9

Abstract

We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiodes grown under varying conditions by molecular beam epitaxy and subjected to postgrowth rapid thermal annealing (RTA) at a series of temperatures. It is found that the device performance of the nonoptimally grown GaInNAs p +in + structures, with nominal compositions of 10% In and 3.8% N, can be improved significantly by the RTA treatment to match that of optimally grown structures. The optimally annealed devices exhibit overall improvement in optical and electrical characteristics, including increased photoluminescence brightness, reduced density of deep-level traps, reduced series resistance resulting from the GaAs/GaInNAs heterointerface, lower dark current, and significantly lower background doping density, all of which can be attributed to the reduced structural disorder in the GaInNAs alloy.

Keywords

Photodetector dilute nitride GaInNAs annealing defects dark current quantum efficiency

Copyright information

© TMS 2012