Journal of Electronic Materials

, Volume 41, Issue 11, pp 3027–3030

Carrier Lifetime Measurements in Long-Wave Infrared InAs/GaSb Superlattices Under Low Excitation Conditions

Authors

    • Department of Electrical and Computer EngineeringStony Brook University
  • Dmitri Donetsky
    • Department of Electrical and Computer EngineeringStony Brook University
  • Seungyong Jung
    • Department of Electrical and Computer EngineeringStony Brook University
  • Gregory Belenky
    • Department of Electrical and Computer EngineeringStony Brook University
Article

DOI: 10.1007/s11664-012-2216-1

Cite this article as:
Wang, D., Donetsky, D., Jung, S. et al. Journal of Elec Materi (2012) 41: 3027. doi:10.1007/s11664-012-2216-1

Abstract

Minority carrier lifetime in long-wave infrared (LWIR) type II InAs/GaSb superlattices was studied using the optical modulation response (OMR) technique in wide ranges of excitation and temperature. The measured carrier lifetime was found to increase superexponentially with decreasing excitation power density below the level of 1 mW/cm2 to 2 mW/cm2. The phenomenon was qualitatively explained by the presence of shallow trapping centers.

Keywords

Carrier lifetime long-wave infrared superlattice

Copyright information

© TMS 2012