Article

Journal of Electronic Materials

, Volume 41, Issue 11, pp 3027-3030

Carrier Lifetime Measurements in Long-Wave Infrared InAs/GaSb Superlattices Under Low Excitation Conditions

  • Ding WangAffiliated withDepartment of Electrical and Computer Engineering, Stony Brook University Email author 
  • , Dmitri DonetskyAffiliated withDepartment of Electrical and Computer Engineering, Stony Brook University
  • , Seungyong JungAffiliated withDepartment of Electrical and Computer Engineering, Stony Brook University
  • , Gregory BelenkyAffiliated withDepartment of Electrical and Computer Engineering, Stony Brook University

Abstract

Minority carrier lifetime in long-wave infrared (LWIR) type II InAs/GaSb superlattices was studied using the optical modulation response (OMR) technique in wide ranges of excitation and temperature. The measured carrier lifetime was found to increase superexponentially with decreasing excitation power density below the level of 1 mW/cm2 to 2 mW/cm2. The phenomenon was qualitatively explained by the presence of shallow trapping centers.

Keywords

Carrier lifetime long-wave infrared superlattice