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Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation

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Abstract

The effects of V/III ratio and seed window orientation on the coalescence of epitaxial lateral overgrowth InP over SiO2 using metal organic vapor-phase epitaxy with tertiary butyl phosphine were investigated. Parallel lines having θ = 60° and 30° off [0\( \bar{1} \)1] were coalesced, and their lateral growth rate variation with V/III was measured. Coalescence of lines separated by narrow angles in a star-like pattern was also studied. We find the greatest extent of coalescence to occur when the window stripe is oriented just off of the ⟨010⟩ directions. V/III ratio strongly affects the extent of coalescence, showing an alternating enhancement or inhibition depending on which side of the ⟨010⟩ direction the stripes are oriented. The variation in quality of coalesced material between stripes separated by narrow angles is examined with cross-sectional transmission electron microscopy, illustrating the most problematic growth directions under two V/III ratio conditions.

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Authors and Affiliations

  1. Department of ECE, University of California Santa Barbara, Santa Barbara, CA, 93106, USA

    Nick Julian, Phil Mages, Chong Zhang, Steven Denbaars, Larry Coldren, Pierre Petroff & John Bowers

  2. Department of Materials, University of California Santa Barbara, Santa Barbara, CA, 93106, USA

    Jack Zhang, Stephan Kraemer, Susanne Stemmer, Steven Denbaars, Larry Coldren, Pierre Petroff & John Bowers

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  1. Nick Julian
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  2. Phil Mages
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  3. Chong Zhang
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  4. Jack Zhang
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  5. Stephan Kraemer
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  6. Susanne Stemmer
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  7. Steven Denbaars
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  8. Larry Coldren
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  9. Pierre Petroff
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  10. John Bowers
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Correspondence to Nick Julian.

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Julian, N., Mages, P., Zhang, C. et al. Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation. J. Electron. Mater. 41, 845–852 (2012). https://doi.org/10.1007/s11664-012-2020-y

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  • DOI: https://doi.org/10.1007/s11664-012-2020-y

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