Journal of Electronic Materials

, Volume 41, Issue 10, pp 2912–2916

Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors

Authors

    • Brookhaven National Laboratory
  • A.E. Bolotnikov
    • Brookhaven National Laboratory
  • P.M. Fochuk
    • Brookhaven National Laboratory
    • Chernivtsi National University
  • Y. Cui
    • Brookhaven National Laboratory
  • G. S. Camarda
    • Brookhaven National Laboratory
  • A. Hossain
    • Brookhaven National Laboratory
  • K. H. Kim
    • Brookhaven National Laboratory
  • J. Horace
    • Brookhaven National Laboratory
    • Alabama A&M University
  • B. McCall
    • Brookhaven National Laboratory
    • Alabama A&M University
  • R. Gul
    • Brookhaven National Laboratory
  • O.V. Kopach
    • Brookhaven National Laboratory
    • Chernivtsi National University
  • S.U. Egarievwe
    • Brookhaven National Laboratory
    • Alabama A&M University
  • R.B. James
    • Brookhaven National Laboratory
Article

DOI: 10.1007/s11664-012-2013-x

Cite this article as:
Yang, G., Bolotnikov, A., Fochuk, P. et al. Journal of Elec Materi (2012) 41: 2912. doi:10.1007/s11664-012-2013-x

We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material’s resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.

Keywords

CZT post-growth annealing Te inclusions resistivity surface morphology

Copyright information

© TMS 2012