Journal of Electronic Materials

, Volume 41, Issue 3, pp 524–529

Annealing-Induced Morphological Changes in Nanocrystalline Quantum Dots and Their Impact on Charge Transport Properties

Authors

  • Sushmita Biswas
    • Air Force Research Laboratory2941 Hobson Way, Wright Patterson Air Force Base
  • David J. Gosztola
    • Center for Nanoscale MaterialsArgonne National Laboratory
  • Gary P. Wiederrecht
    • Center for Nanoscale MaterialsArgonne National Laboratory
  • Michael A. Stroscio
    • Department of Electrical and Computer EngineeringUniversity of Illinois at Chicago
    • Department of BioengineeringUniversity of Illinois at Chicago
    • Department of PhysicsUniversity of Illinois at Chicago
    • Department of Electrical and Computer EngineeringUniversity of Illinois at Chicago
    • Department of PhysicsUniversity of Illinois at Chicago
Article

DOI: 10.1007/s11664-011-1815-6

Cite this article as:
Biswas, S., Gosztola, D.J., Wiederrecht, G.P. et al. Journal of Elec Materi (2012) 41: 524. doi:10.1007/s11664-011-1815-6

Abstract

The effects of thermal annealing on the morphological and photoconductive properties of cadmium selenide quantum dots coated with zinc sulfide are studied. The results of transmission electron microscopy with in situ annealing show a number of events taking place simultaneously, including aggregation of dots, changes in the size and shape distribution, and reduction in interdot separation. Transient absorption results indicate that there is a small redshift of the spectrum. There is a shortening of the absorption decay lifetimes due to annealing. Higher photocurrents are measured in the annealed compared with unannealed dots at room temperature.

Keywords

Quantum dotsannealingcadmium selenidecharge transportmorphology

Copyright information

© TMS 2011