Journal of Electronic Materials

, Volume 41, Issue 3, pp 494-497

First online:

Low-Temperature Epitaxy of Compressively Strained Silicon Directly on Silicon Substrates

  • D. ShahrjerdiAffiliated withIBM T. J. Watson Research Center Email author 
  • , B. HekmatshoarAffiliated withIBM T. J. Watson Research Center
  • , S. W. BedellAffiliated withIBM T. J. Watson Research Center
  • , M. HopstakenAffiliated withIBM T. J. Watson Research Center
  • , D. K. SadanaAffiliated withIBM T. J. Watson Research Center


We report epitaxial growth of compressively strained silicon directly on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was performed in a silane and hydrogen gas mixture at temperatures as low as 150°C. We investigate the effect of hydrogen dilution during the silicon epitaxy on the strain level by high-resolution x-ray diffraction. Additionally, triple-axis x-ray reciprocal-space mapping of the samples indicates that (i) the epitaxial layers are fully strained and (ii) the strain is graded. Secondary-ion mass spectrometry depth profiling reveals the correlation between the strain gradient and the hydrogen concentration profile within the epitaxial layers. Furthermore, heavily phosphorus-doped layers with an electrically active doping concentration of ~2 × 1020 cm−3 were obtained at such low growth temperatures.


Low temperature epitaxial growth compressive strain heavily doped