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Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates

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Time-resolved nonlinear optical techniques were applied to determine the electronic parameters of cubic silicon carbide layers. Carrier lifetime, τ, and mobility, μ, were measured in a free-standing wafer grown on undulant Si and an epitaxial layer grown by hot-wall chemical vapor deposition (CVD) on a nominally on-axis 4H-SiC substrate. Nonequilibrium carrier dynamics was monitored in the 80 K to 800 K range by using a picosecond free carrier grating and free carrier absorption techniques. Correlation of τ(T) and μ a(T) dependencies was explained by the strong contribution of diffusion-limited recombination on extended defects in the layers. A lower defect density in the epitaxial layer on 4H-SiC was confirmed by a carrier lifetime of 100 ns, being ~4 times longer than that in free-standing 3C.

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Authors and Affiliations

  1. Institute of Applied Research, Vilnius University, Saulétekio Ave. 9-3, 10222, Vilnius, Lithuania

    Patrik Ščajev, Jawad Hassan & Kęstutis Jarašiūnas

  2. Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, 466-8555, Japan

    Masashi Kato

  3. Department of Physics, Chemistry and Biology, IFM, Linköping University, 581 83, Linköping, Sweden

    Anne Henry & J. Peder Bergman

Authors
  1. Patrik Ščajev
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  2. Jawad Hassan
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  3. Kęstutis Jarašiūnas
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  5. Anne Henry
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  6. J. Peder Bergman
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Correspondence to Patrik Ščajev.

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Ščajev, P., Hassan, J., Jarašiūnas, K. et al. Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates. J. Electron. Mater. 40, 394–399 (2011). https://doi.org/10.1007/s11664-010-1378-y

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  • DOI: https://doi.org/10.1007/s11664-010-1378-y

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