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Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators

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Abstract

This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II–VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II–VI stack serves both as a tunnel insulator and a high-κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

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Acknowledgement

The authors gratefully acknowledge discussions with Dr. Daniel Purdy and support by ONR Grants N00014-06-1-0016 and N00014-08-1-0149 and by NSF Grant ECS 0622068. Silicon nitride layers were grown by C. Tillinghast at Yale University.

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Authors and Affiliations

  1. Electrical and Computer Engineering Department, University of Connecticut, 371 Fairfield Road, Storrs, CT, 06269-2157, USA

    E. Suarez, M. Gogna, F. Al-Amoody, S. Karmakar, J. Ayers & F. Jain

  2. RSoft Design Group, Ossining, NY, USA

    E. Heller

Authors
  1. E. Suarez
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  2. M. Gogna
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  3. F. Al-Amoody
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  4. S. Karmakar
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  5. J. Ayers
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  6. E. Heller
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  7. F. Jain
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Correspondence to F. Jain.

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Suarez, E., Gogna, M., Al-Amoody, F. et al. Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators. J. Electron. Mater. 39, 903–907 (2010). https://doi.org/10.1007/s11664-010-1207-3

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  • DOI: https://doi.org/10.1007/s11664-010-1207-3

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