Journal of Electronic Materials

, Volume 38, Issue 8, pp 1522–1527

AFM Characterization of Raman Laser-Induced Damage on CdZnTe Crystal Surfaces

Authors

    • Savannah River National Laboratory
  • Samantha A. Hawkins
    • Savannah River National Laboratory
  • Martine C. Duff
    • Savannah River National Laboratory
  • Michael Groza
    • Fisk University
  • Vladimir Buliga
    • Fisk University
  • Arnold Burger
    • Fisk University
Article

DOI: 10.1007/s11664-009-0763-x

Cite this article as:
Teague, L.C., Hawkins, S.A., Duff, M.C. et al. Journal of Elec Materi (2009) 38: 1522. doi:10.1007/s11664-009-0763-x

Abstract

Raman laser studies of detector-grade CdZnTe crystals show an increase in intensity of the Te peaks of the Raman spectra even at very low laser powers. In this study, atomic force microscopy (AFM) was used to characterize the extent of damage to the CdZnTe crystal surface following exposure to the Raman laser. AFM images revealed localized surface damage in the areas exposed to the Raman laser beam. Additional studies using conductive-probe AFM techniques provided localized electrical information for the laser-induced Te-rich areas.

Keywords

CZTCdZnTeatomic force microscopyRamanradiation detection
Download to read the full article text

Copyright information

© TMS 2009