Journal of Electronic Materials

, Volume 36, Issue 8, pp 1013–1020

Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors

Authors

    • EIC Laboratories, Inc
  • Sung Hoon Kang
    • EIC Laboratories, Inc
  • Michael Choi
    • EIC Laboratories, Inc
  • Jiuan Wei
    • Department of Mechanical EngineeringState University of New York at Stony Brook
  • Lili Zheng
    • Department of Mechanical EngineeringState University of New York at Stony Brook
  • Hui Zhang
    • Department of Mechanical EngineeringState University of New York at Stony Brook
  • Gerald E. Jellison
    • Oak Ridge National Laboratory
  • Michael Groza
    • Center of Excellence in Physics and Chemistry of MaterialsFisk University
  • Arnold Burger
    • Center of Excellence in Physics and Chemistry of MaterialsFisk University
Article

DOI: 10.1007/s11664-007-0164-y

Cite this article as:
Mandal, K.C., Kang, S., Choi, M. et al. Journal of Elec Materi (2007) 36: 1013. doi:10.1007/s11664-007-0164-y

Abstract

Spectrometer-grade CdTe single crystals with resistivities higher than 109 Ω cm have been grown by the modified Bridgman method using zone-refined precursor materials (Cd and Te) under a Cd overpressure. The grown CdTe crystals had good charge-transport properties (μτe = 2 × 10−3 cm2 V−1, μτh = 8 × 10−5 cm2 V−1) and significantly reduced Te precipitates compared with crystals grown without Cd overpressure. The crystal growth conditions for the Bridgman system were optimized by computer modeling and simulation, using modified MASTRAPP program, and applied to crystal diameters of 14 mm (0.55′′), 38 mm (1.5′′), and 76 mm (3′′). Details of the CdTe crystal growth operation, structural, electrical, and optical characterization measurements, detector fabrication, and testing using 241Am (60 keV) and 137Cs (662 keV) sources are presented.

Keywords

CdTecomponent overpressurecrystal growthBridgmanradiation detectors

Copyright information

© TMS 2007