Uniform Cr2+ doping of physical vapor transport grown CdSxSe1−x crystals
- Cite this article as:
- Roy, U.N., Babalola, O.S., Jones, J. et al. Journal of Elec Materi (2005) 34: 19. doi:10.1007/s11664-005-0174-6
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The Cr2+ doped CdS0.8Se0.2 crystals were grown by the vertical, self-seeded, physical vapor transport (PVT) technique. Good quality, crack- and inclusion-free single crystals were grown with an average Cr2+ concentration of 5 × 1018 cm−3. Different source-to-tip distances were used to improve the segregation coefficient (Crcrystal/Crsource) of the grown crystals. It was observed that lowering the source-to-tip distance increases the segregation coefficient dramatically. With a 2-cm source-to-tip distance, good quality crystals were grown with uniform Cr2+ concentration throughout the ingot. The segregation coefficient was found to be ∼0.85. The composition of the crystals was also found to be fairly uniform along the length and across the diameter.