Journal of Electronic Materials

, Volume 34, Issue 1, pp 19–22

Uniform Cr2+ doping of physical vapor transport grown CdSxSe1−x crystals

Authors

  • U. N. Roy
    • Center of Excellence in Physics and Chemistry of MaterialsFisk University
  • O. S. Babalola
    • Center of Excellence in Physics and Chemistry of MaterialsFisk University
  • J. Jones
    • Center of Excellence in Physics and Chemistry of MaterialsFisk University
  • Y. Cui
    • Center of Excellence in Physics and Chemistry of MaterialsFisk University
  • T. Mounts
    • Center of Excellence in Physics and Chemistry of MaterialsFisk University
  • A. Zavalin
    • Center of Excellence in Physics and Chemistry of MaterialsFisk University
  • S. Morgan
    • Center of Excellence in Physics and Chemistry of MaterialsFisk University
  • A. Burger
    • Center of Excellence in Physics and Chemistry of MaterialsFisk University
Regular Issue Paper

DOI: 10.1007/s11664-005-0174-6

Cite this article as:
Roy, U.N., Babalola, O.S., Jones, J. et al. Journal of Elec Materi (2005) 34: 19. doi:10.1007/s11664-005-0174-6

Abstract

The Cr2+ doped CdS0.8Se0.2 crystals were grown by the vertical, self-seeded, physical vapor transport (PVT) technique. Good quality, crack- and inclusion-free single crystals were grown with an average Cr2+ concentration of 5 × 1018 cm−3. Different source-to-tip distances were used to improve the segregation coefficient (Crcrystal/Crsource) of the grown crystals. It was observed that lowering the source-to-tip distance increases the segregation coefficient dramatically. With a 2-cm source-to-tip distance, good quality crystals were grown with uniform Cr2+ concentration throughout the ingot. The segregation coefficient was found to be ∼0.85. The composition of the crystals was also found to be fairly uniform along the length and across the diameter.

Key words

II-VI ternary Cr2+ doping segregation coefficient physical vapor transport (PVT) growth

Copyright information

© TMS-The Minerals, Metals and Materials Society 2005