Journal of Electronic Materials

, Volume 32, Issue 7, pp 737–741

Luminescence study of ZnTe:Cr epilayers grown by molecular-beam epitaxy

  • Ming Luo
  • B. L. Vanmil
  • R. P. Tompkins
  • Y. Cui
  • T. Mounts
  • U. N. Roy
  • A. Burger
  • T. H. Myers
  • N. C. Giles
Special Issue Paper

DOI: 10.1007/s11664-003-0062-x

Cite this article as:
Luo, M., Vanmil, B.L., Tompkins, R.P. et al. Journal of Elec Materi (2003) 32: 737. doi:10.1007/s11664-003-0062-x

Abstract

Incorporation of Cr into ZnTe epilayers grown by molecular-beam epitaxy (MBE) is reported. Photoluminescence (PL) using both continuous wave (CW) and pulsed-excitation sources is used to characterize the radiative efficiency of doped layers in the infrared region. The Cr2+ ions produce a broad emission band peaking in the 2–3 µm range, which is of potential use in tunable-laser devices. The optimum Cr concentration for achieving bright, room-temperature infrared emission was found to be in the range from low- to mid-1018 cm−3. Temperature-dependent luminescence studies were performed to determine thermal-quenching activation energies. Using a pulsed-laser operating at 1.9 µm, an investigation of emission lifetimes was made. The emission-decay curves for the Cr2+ recombination in ZnTe:Cr films could be described by a single exponential and were nearly independent of temperature from 80 K to 300 K. A room-temperature lifetime of ∼2.5 µsec in a ZnTe:Cr layer with [Cr] ∼1.4 × 1018 cm−3 compares favorably with values reported for bulk ZnTe:Cr.

Key words

ZnTeZnTe:Crmolecular-beam epitaxy (MBE)

Copyright information

© TMS-The Minerals, Metals and Materials Society 2003

Authors and Affiliations

  • Ming Luo
    • 1
  • B. L. Vanmil
    • 1
  • R. P. Tompkins
    • 1
  • Y. Cui
    • 2
  • T. Mounts
    • 2
  • U. N. Roy
    • 2
  • A. Burger
    • 2
  • T. H. Myers
    • 1
  • N. C. Giles
    • 1
  1. 1.Physics DepartmentWest Virginia UniversityMorgantown
  2. 2.Center for Photonic Materials and Devices, Physics DepartmentFisk UniversityNashville