Journal of Electronic Materials

, Volume 31, Issue 7, pp 770–775

Heavy Cr doping of ZnSe by molecular beam epitaxy

Authors

  • B. L. Vanmil
    • Department of PhysicsWest Virginia University
  • A. J. Ptak
    • Department of PhysicsWest Virginia University
  • L. Bai
    • Department of PhysicsWest Virginia University
  • Lijun Wang
    • Department of PhysicsWest Virginia University
  • M. Chirila
    • Department of PhysicsWest Virginia University
  • N. C. Giles
    • Department of PhysicsWest Virginia University
  • T. H. Myers
    • Department of PhysicsWest Virginia University
  • Larry Wang
    • Evans Analytical Group, Charles Evans and Associates
Special Issue Paper

DOI: 10.1007/s11664-002-0234-0

Cite this article as:
Vanmil, B.L., Ptak, A.J., Bai, L. et al. Journal of Elec Materi (2002) 31: 770. doi:10.1007/s11664-002-0234-0

Abstract

Epitaxial ZnSe layers were grown by molecular beam epitaxy (MBE) to study Cr incorporation with the long-term goal of demonstrating an alternate route for achieving transition-metal-doped lasers. Concentrations between 1015 atoms cm−3 and 4×1020 atoms cm−3 were achieved. Secondary ion-mass spectroscopy (SIMS) concentration profiles strongly suggest that surface segregation and accumulation of Cr occurs during growth. Photoluminescence (PL) measurements indicate Cr is incorporated in the optically active Cr2+ state up to levels of ∼1019 cm−3. Electron paramagnetic resonance (EPR) studies suggest that the Cr atoms exhibit collective magnetic behavior even at these levels. X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) indicate high structural quality is maintained for Cr incorporation for levels up to ∼1019 atoms cm−3.

Key words

ZnSeZnSe:Crmolecular beam epitaxy
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Copyright information

© TMS-The Minerals, Metals and Materials Society 2002