Special Issue Paper

Journal of Electronic Materials

, Volume 31, Issue 7, pp 770-775

Heavy Cr doping of ZnSe by molecular beam epitaxy

  • B. L. VanmilAffiliated withDepartment of Physics, West Virginia University
  • , A. J. PtakAffiliated withDepartment of Physics, West Virginia University
  • , L. BaiAffiliated withDepartment of Physics, West Virginia University
  • , Lijun WangAffiliated withDepartment of Physics, West Virginia University
  • , M. ChirilaAffiliated withDepartment of Physics, West Virginia University
  • , N. C. GilesAffiliated withDepartment of Physics, West Virginia University
  • , T. H. MyersAffiliated withDepartment of Physics, West Virginia University
  • , Larry WangAffiliated withEvans Analytical Group, Charles Evans and Associates

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Abstract

Epitaxial ZnSe layers were grown by molecular beam epitaxy (MBE) to study Cr incorporation with the long-term goal of demonstrating an alternate route for achieving transition-metal-doped lasers. Concentrations between 1015 atoms cm−3 and 4×1020 atoms cm−3 were achieved. Secondary ion-mass spectroscopy (SIMS) concentration profiles strongly suggest that surface segregation and accumulation of Cr occurs during growth. Photoluminescence (PL) measurements indicate Cr is incorporated in the optically active Cr2+ state up to levels of ∼1019 cm−3. Electron paramagnetic resonance (EPR) studies suggest that the Cr atoms exhibit collective magnetic behavior even at these levels. X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) indicate high structural quality is maintained for Cr incorporation for levels up to ∼1019 atoms cm−3.

Key words

ZnSe ZnSe:Cr molecular beam epitaxy