Abstract
The compatibility between Ag fillers and Sn-Pb plating at elevated temperature was examined by mechanical test, electrical test, and microstructure observation. The degradation at 150°C is caused by the preferential diffusion of Sn from the plating layer into Ag in the conductive adhesive. By this diffusion, Ag-Sn intermetallic compounds formed in the Ag fillers adjacent to the plating layer, and many large Kirkendall voids are formed in the Sn-Pb plating layer. Furthermore, an interfacial debonding occurred between the conductive adhesive, and the Sn-Pb plating layer is also observed near the free surface after heat exposure.
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References
H. Wolfson and G. Elliott, U.S. patent 2,774,747 (1956).
M. Komagata, G. Toida, T. Hocchi, and K. Suzuki, Proc. Adhesive in Electronics 2000, ed. J. Kivilahti and M. Hyytiainen (Piscataway, NJ: IEEE, 2000), pp. 216–220.
D. Lu and C.P. Wong, IEEE Trans. Comp. Packag. Manuf. Technol. 23, 620 (2000).
R. Dudek, H. Berek, T. Fritsch, and B. Michel, IEEE Trans. Comp. Packag. Manuf. Technol. 23, 462 (2000).
J.H. Constable, T. Kache, H. Teichmann, S. Mühle, and M.A. Gaynes, IEEE Trans. Comp. Packag. Manuf. Technol. 22, 191 (1999).
S.K. Kang, R.S. Rai, and S. Purushothamann, IEEE Trans. Comp. Packag. Manuf. Technol., Part A 21, 18 (1998).
D. Klosterman, L. Li, and J.E. Morris, IEEE Trans. Comp. Packag. Manuf. Technol., Part A 21, 23 (1998).
K. Suzuki, O. Suzuki, and M. Komagata, IEEE Trans. Comp. Packag. Manuf. Technol., Part A 21, 252 (1998).
L. Li and J.E. Morris, IEEE Trans. Comp. Packag. Manuf. Technol., Part A 20, 3 (1997).
S. Kotthaus, B.H. Günther, R. Häug, and H. Schafer, IEEE Trans. Comp. Packag. Manuf. Technol., Part A 20, 15 (1997).
J. Liu, K. Gustafsson, Z. Lai, and C. Li, IEEE Trans. Comp. Packag. Manuf. Technol., Part A 20, 21 (1997).
O. Suzuki, M. Komagata, and K. Suzuki, Proc. 3rd Int. Conf. on Adhesive Joining and Coating Technology in Electronics Manufacturing, Adhesives in Electronics. ′98, ed. J.H. Constable (Piscataway, NJ: IEEE, 1998), pp. 351–355.
H.K. Kim and F.G. Shi, Microelectron. J. 32, 315 (2001).
M. Bouguettaya, N. Vedie, and C. Chevrot, Synth. Met. 102, 1428 (1999).
D. Lu and C.P. Wong, Int. J. Adhesion Adhesive 20, 189 (2000).
S.K. Kang and S. Purushothamann, J. Electron. Mater. 28, 1314 (1999).
C. Shearer, B. Shearer, G. Matijasevic, and P. Gandhi, J. Electron. Mater. 28, 1319 (1999).
M.G. Périchaud, J.Y. Delétage, H. Frémont, Y. Danto, and C. Faure, Microelectron. Reliability 40, 1227 (2000).
P. Gas and J. Bernardini, Scripta Metall. 367, 12 (1978).
T. Okabe, R.F. Hochman, and M.E. McLain, J. Biomed. Mater. Res. 8, 381 (1974).
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Yamashita, M., Suganuma, K. Degradation mechanism of ag-epoxy conductive adhesive/Sn-Pb plating interface by heat exposure. J. Electron. Mater. 31, 551–556 (2002). https://doi.org/10.1007/s11664-002-0124-5
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DOI: https://doi.org/10.1007/s11664-002-0124-5