Journal of Electronic Materials

, Volume 29, Issue 2, pp 205–209

Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE

  • F. Brunner
  • E. Richter
  • T. Bergunde
  • I. Rechenberg
  • A. Bhattacharya
  • A. Maassdorf
  • J. W. Tomm
  • P. Kurpas
  • M. Achouche
  • J. Würfl
  • M. Weyers
Regular Issue Paper

DOI: 10.1007/s11664-000-0143-z

Cite this article as:
Brunner, F., Richter, E., Bergunde, T. et al. Journal of Elec Materi (2000) 29: 205. doi:10.1007/s11664-000-0143-z

Abstract

We have investigated the effect of high-temperature annealing on device performance of GaInP/GaAs HBTs using a wide range of MOVPE growth parameters for the C-doped base layer. Carbon doping was achieved either via TMG and AsH3 only or by using an extrinsic carbon source. High-temperature annealing causes degradation of carbon-doped GaAs in terms of minority carrier properties even at doping levels of p=1 × 1019 cm−3. The measured reduction in electron lifetime and luminescence intensity correlates with HBT device results. It is shown that the critical temperature where material degradation starts is both a function of doping method and carbon concentration.

Key words

Gallium arsenide carbon doping heterojunction bipolar transistors annealing 

Copyright information

© TMS-The Minerals, Metals and Materials Society 2000

Authors and Affiliations

  • F. Brunner
    • 1
  • E. Richter
    • 1
  • T. Bergunde
    • 1
  • I. Rechenberg
    • 1
  • A. Bhattacharya
    • 1
  • A. Maassdorf
    • 1
  • J. W. Tomm
    • 2
  • P. Kurpas
    • 1
  • M. Achouche
    • 1
  • J. Würfl
    • 1
  • M. Weyers
    • 1
  1. 1.Ferdinand-Braun-Institut für HöchstfrequenztechnikBerlin
  2. 2.Max-Born-Institut für Nichtlineare Optik und KurzzeitspektroskopieBerlin

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