Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE
- Cite this article as:
- Brunner, F., Richter, E., Bergunde, T. et al. Journal of Elec Materi (2000) 29: 205. doi:10.1007/s11664-000-0143-z
- 89 Downloads
We have investigated the effect of high-temperature annealing on device performance of GaInP/GaAs HBTs using a wide range of MOVPE growth parameters for the C-doped base layer. Carbon doping was achieved either via TMG and AsH3 only or by using an extrinsic carbon source. High-temperature annealing causes degradation of carbon-doped GaAs in terms of minority carrier properties even at doping levels of p=1 × 1019 cm−3. The measured reduction in electron lifetime and luminescence intensity correlates with HBT device results. It is shown that the critical temperature where material degradation starts is both a function of doping method and carbon concentration.