Abstract
Shock loading single crystalline nickel creates a defected nanostructure dominated by stacking faults and twins. This transformation is caused by a complex interplay between the incident waves, the waves reflected from sample-free surfaces, and the interference between reflected waves. The plasticity behavior of this shock-induced defected nickel was studied using molecular dynamics (MD) simulations. Compared to a perfect single-crystal nickel sample of the same size, the twinned sample has significantly less yield stress in compression, a slightly lower yield stress in tension, and a yield stress about 30 pct higher in shear. Importantly, our simulations reveal the underlying atomistic mechanisms of dislocation nucleation and twin growth. We observe that while strengthening under shear loading involves lattice dislocations cutting through twins, weakening arises from nucleation of dislocations on the twins under tensile and compressive loading. Also, we have discovered precursors to dislocation loop nucleation in these simulations.
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Acknowledgments
This work was funded by the ASC program at the Los Alamos National Laboratory. Many of the calculations were performed using LANL Institutional Computing Facilities using a modified version of Warp, a MD code originally developed by Steve Plimpton at Sandia National Laboratories. We thank R.G. Hoagland and Y.T. Zhu, Los Alamos National Laboratory, and G.J. Wagner, Sandia National Laboratories, for discussions.
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This article is based on a presentation made in the symposium entitled “Dynamic Behavior of Materials,” which occurred during the TMS Annual Meeting and Exhibition, February 25–March 1, 2007 in Orlando, Florida, under the auspices of The Minerals, Metals and Materials Society, TMS Structural Materials Division, and TMS/ASM Mechanical Behavior of Materials Committee.
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Srinivasan, S., Baskes, M. Atomistic Simulations of the Plasticity Behavior of Shock-Induced Polycrystalline Nickel. Metall Mater Trans A 38, 2716–2720 (2007). https://doi.org/10.1007/s11661-007-9277-4
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DOI: https://doi.org/10.1007/s11661-007-9277-4