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Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors

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An Erratum to this article was published on 26 December 2015

Abstract

Based on the influence of edge effect and channel shape, two new graphene nanoribbon field effect transistors are presented being useful in high-voltage and highly sensitive optical applications. We fabricated and examined our devices under different conditions. It is seen that by choosing the proper channel shape, ionization rate and breakdown voltage could be improved compared to a normal rectangular device. We report nearly 11 and 19 % improvements in breakdown voltage and ionization rate of graphene nanoribbon field effect transistors (GNRFET), respectively.

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Conflict of Interest

The authors declare that they have no competing interests.

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Authors and Affiliations

  1. Photonic Research Center, University of Malaya, Kuala Lumpur, 50600, Malaysia

    Mahdiar Ghadiry & Harith Ahmad

  2. Department of Computer Engineering, Faculty of Engineering, Islamic Azad University, Arak Branch, Arak, Iran

    Alieh Hivechi

  3. Department of Computer Engineering, Faculty of Engineering, Islamic Azad University, Aligoudarz Branch, Aligoudarz, Iran

    Fatemeh Tavakoli

  4. School of Electrical and Electronics Engineering, Universiti Sains Malaysia, Penang, Malaysia

    Asrulnizam Abd Manaf

Authors
  1. Mahdiar Ghadiry
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  2. Harith Ahmad
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  3. Alieh Hivechi
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  4. Fatemeh Tavakoli
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  5. Asrulnizam Abd Manaf
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Correspondence to Mahdiar Ghadiry.

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Ghadiry, M., Ahmad, H., Hivechi, A. et al. Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors. Plasmonics 11, 573–577 (2016). https://doi.org/10.1007/s11468-015-0073-5

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  • DOI: https://doi.org/10.1007/s11468-015-0073-5

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