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Spin manipulations through electrical and thermoelectrical transport in magnetic tunnel junctions

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Abstract

A brief review is presented, which includes the direct current, alternate current, electrical and thermoelectrical transport as well as spin transfer effect in a variety of spin-based nanostructures such as the magnetic tunnel junction (MTJ), ferromagnet(FM)-quantum dot (QD)/FM-FM, double barrier MTJ, FM-marginal Fermi liquid-FM, FM-unconventional superconductor-FM (FUSF), quantum ring and optical spin-field-effect transistor. The magnetoresistances in those structures, spin accumulation effect in FM-QD-FM and FUSF systems, spin injection and spin filter into semiconductor, spin transfer effect, photon-assisted spin transport, magnonassisted tunneling, electron-electron interaction effect on spin transport, laser-controlled spin dynamics, and thermoelectrical spin transport are discussed.

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Authors and Affiliations

  1. School of Electronics, Eletrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

    ZhenGang Zhu

  2. School of Physics, University of Chinese Academy of Sciences, Beijing, 100049, China

    Gang Su

  3. Institut für Physik, Martin-Luther-Universität, Halle-Wittenberg Nanotechnikum-Weinberg, Heinrich-Damerow-Strasse 4, D-06120, Halle (Saale), Germany

    ZhenGang Zhu

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Zhu, Z., Su, G. Spin manipulations through electrical and thermoelectrical transport in magnetic tunnel junctions. Sci. China Phys. Mech. Astron. 56, 166–183 (2013). https://doi.org/10.1007/s11433-012-4960-x

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