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Polycrystalline diamond MESFETs by Au-mask technology for RF applications

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Abstract

Metal-semiconductor field effect transistors (MESFETs) were fabricated on H-terminated polycrystalline diamond. The DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA/mm at a gate-source voltage of −6 V, and a maximum transconductance of 20 mS/mm at a drain-source voltage of −1.5 V. The small signal S-parameters of MESFET with 2 × 100 μm gate width and 2 μm gate length were measured. An extrinsic cut-off frequency (f T) of 1.7 GHz and the maximum oscillation frequency (f max) of 2.5 GHz were obtained, which was the first report on diamond MESFETs with RF characteristics in China.

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Authors and Affiliations

  1. Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China

    ZhiHong Feng, JingJing Wang, ZeZhao He, ShaoBo Dun, Cui Yu & ShuJun Cai

  2. School of Information Engineering, Hebei University of Technology, Tianjin, 300130, China

    ZeZhao He

  3. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 10010, China

    JinLong Liu & ChengMing Li

  4. Hebei Institute of Laser, Shijiazhuang, 050000, China

    PingWei Zhang & Hui Guo

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  1. ZhiHong Feng
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  2. JingJing Wang
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  3. ZeZhao He
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  4. ShaoBo Dun
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  5. Cui Yu
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  6. JinLong Liu
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  7. PingWei Zhang
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  8. Hui Guo
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  9. ChengMing Li
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  10. ShuJun Cai
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Correspondence to ZhiHong Feng.

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Feng, Z., Wang, J., He, Z. et al. Polycrystalline diamond MESFETs by Au-mask technology for RF applications. Sci. China Technol. Sci. 56, 957–962 (2013). https://doi.org/10.1007/s11431-013-5163-z

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  • DOI: https://doi.org/10.1007/s11431-013-5163-z

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