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Electrical Properties OF GaAs Doped with Iron

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Russian Physics Journal Aims and scope

Electrical characteristics of GaAs doped with Fe in the diffusion process are studied. It is shown that as in the case of the single-crystal GaAs doped with Fe during growth, in GaAs doped in the diffusion process, the impurity Fe creates an acceptor level 0.53 eV above the top of the GaAs valence band. The position of the energy level of Fe and the electrical characteristics of GaAs:Fe are independent of the regime of the samples annealing at a temperature below the doping temperature.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physical-Technical Institute at National Research Tomsk State University, Tomsk, Russia

    S. S. Khludkov, I. A. Prudaev & D. L. Budnitskii

  2. National Research Tomsk State University, Tomsk, Russia

    V. A. Novikov & K. S. Lopatetskaya

Authors
  1. S. S. Khludkov
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  2. I. A. Prudaev
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  3. V. A. Novikov
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  4. D. L. Budnitskii
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  5. K. S. Lopatetskaya
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Correspondence to S. S. Khludkov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 103–105, December, 2013.

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Khludkov, S.S., Prudaev, I.A., Novikov, V.A. et al. Electrical Properties OF GaAs Doped with Iron. Russ Phys J 56, 1435–1438 (2014). https://doi.org/10.1007/s11182-014-0196-8

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  • DOI: https://doi.org/10.1007/s11182-014-0196-8

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