Abstract
Graphene was grown on copper foils using a low pressure chemical vapor deposition technique. In this experiment the pressure varied from 0.1 to 4 Torr, the time was maintained at 150 s, the temperature was kept at 1000 °C, and the flow rate of hydrogen and methane was 10 and 30 sccm, respectively. To characterize the graphene layer formed on the copper foil, Raman spectra and SEM were analyzed. From the Raman spectra of samples, the ratio of I D/I G increases and the grain size of synthesized graphene samples decreases with rising pressure of the reaction chamber. The effect of low pressure on the density is clearly obvious since the ratio of I D/I G is less than 0.2. A lower value showed fewer defects. For the first time, MountainsMap Premium and Gwyddion software were used to investigate the morphological characteristics and quality of graphene samples. The results suggest that the density of graphene particles on the surface rises with rising pressure. It can be concluded that the density, uniformity, and the grain size of the synthesized graphene are controlled by changing the pressure of the reaction chamber.
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Alipour, R., Riazifar, M. & Afsari, T. The effect of pressure on morphological features and quality of synthesized graphene. Res Chem Intermed 42, 8261–8272 (2016). https://doi.org/10.1007/s11164-016-2594-8
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DOI: https://doi.org/10.1007/s11164-016-2594-8