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GeS2 and GeSe2 PECVD from GeCl4 and Various Chalcogenide Precursors

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Abstract

The plasma enhanced chemical vapor depositions of germanium chalcogenide thin films from germanium tetrachloride, hydrogen sulfide and alkyl chalcogenides were studied to determine the viability of these reagents for thin film deposition. Hydrogen sulfide is a commonly used reagent for this technique and was used to determine optimal reaction conditions for thin film deposition. Germanium tetrachloride, alkylsulfides and alkylselenides were also employed because of their lower potential toxicities and higher availabilities compared to their more typical congeners: germane, hydrogen sulfide and hydrogen selenide in the formation of germanium chalcogenides. Alkylsulfides were found to be unsuitable for the deposition of germanium sulfides, however alkylselenide precursors were used successfully for the deposition of germanium selenides. The relative mass flow rates, reactor pressure, substrate temperature and plasma power density were studied for their effects on germanium chalcogenide deposition. These parameters affected the composition, deposition rate, film quality, and spectroscopic properties of the deposited films.

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Acknowledgments

We would like to acknowledge Prof. Kris Campbell of BSU and NASA Idaho EPSCoR Grant #NNX07AT60A for funding this part of the project along with NSF MRI Grant #BCS-0821783 for funding the purchase of the JEOL JSM-6701F field emission SEM with Bruker EDS.

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Authors and Affiliations

  1. Department of Chemistry, Idaho State University, Stop 8023, Pocatello, ID, 83209, USA

    Patrick J. Whitham, Dennis P. Strommen, Sandra Lundell, Lisa D. Lau & Rene Rodriguez

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  1. Patrick J. Whitham
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  2. Dennis P. Strommen
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  3. Sandra Lundell
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  4. Lisa D. Lau
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  5. Rene Rodriguez
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Correspondence to Rene Rodriguez.

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Whitham, P.J., Strommen, D.P., Lundell, S. et al. GeS2 and GeSe2 PECVD from GeCl4 and Various Chalcogenide Precursors. Plasma Chem Plasma Process 34, 755–766 (2014). https://doi.org/10.1007/s11090-014-9542-4

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  • DOI: https://doi.org/10.1007/s11090-014-9542-4

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