Abstract
GaN-based light-emitting diodes (LEDs) exhibit a severe efficiency droop with increasing current density. This paper analyses a new approach to circumvent the droop problem by inserting tunnel junctions into the multi-quantum well (MQW) active region, resulting in carrier recycling, a more uniform MQW carrier distribution, and less carrier loss. Self-consistent numerical simulations of such bipolar-cascade LED with four stages predict a quantum efficiency of 250 % at low power and still more than 100 % at high power, despite additional light absorption at the tunnel junctions.
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Piprek, J. GaN-based bipolar cascade light-emitting diode with 250 % peak quantum efficiency. Opt Quant Electron 47, 1305–1310 (2015). https://doi.org/10.1007/s11082-014-0043-8
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DOI: https://doi.org/10.1007/s11082-014-0043-8