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Simulations of mid infrared emission of InAsN semiconductors

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Abstract

This paper delivers an approximation to the complex many body problem of luminescence in semiconductors to the case of mid infrared luminescence of dilute nitrides. The results are compared with recent experimental data for InAsN semiconductors.

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Acknowledgments

The authors acknowledge support from MPNS COST ACTION MP1204 - TERA-MIR Radiation: Materials, Generation, Detection and Applications and BM1205 European Network for Skin Cancer Detection using Laser Imaging. C.I. Oriaku’s research is supported by the MOUA-Umudike under TETFUND, Nigeria.

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  1. Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield, S1 1WB, UK

    C. I. Oriaku & M. F. Pereira

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  1. C. I. Oriaku
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  2. M. F. Pereira
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Correspondence to M. F. Pereira.

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Oriaku, C.I., Pereira, M.F. Simulations of mid infrared emission of InAsN semiconductors. Opt Quant Electron 47, 829–834 (2015). https://doi.org/10.1007/s11082-014-0002-4

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